01
3D Mask Effects Enhance Imaging in High-NA EUV and Hyper-NA EUV Litho (Fraunhofer, ASML)
[ASML] Researchers at the Fraunhofer Institute for Integrated Systems and Device Technology IISB and ASML published a technical paper titled “Benefits of three-dimensional mask (M3D) effects in high-NA and hyper-NA EUV lithography.” Excerpt: “This study aims to offer an alternative perspective on M3D effects in EUV lithography. We demonstrate that M3D effects can be harnessed under... » read more The post 3D Mask Effects...